This experiment is designed to calculate the energy band gap in the intrinsic region and the temperature dependence of the majority carrier mobility in the extrinsic region of semiconductors.
|Sample Results||Resistance versus temperature plot of carbon resistorResistivity versus temperature plot of GeResistance versus temperature plot of UJT|
|Version||16 October 2018 - V2|
Further Readings and References
- Introduction to Solid State PhysicsJohn Wiley and Sons, C. Kittel, , 216, (2005).
- An undergratuduate laboratory experiment for measuring the energy gap in semiconductorsEuropean Journal of Physics, A. Sconza and G. Torzo, 10, , (1989).
- An Introduction to Materials Engineering and ScienceNew Jersey, John Wiley and Sons, Hoboken, B. S. Mitchell, , 550, (2004).