Optimized synthesis of dichalcogenide films using chemical vapor deposition

Transition metal dichalcogenides and especially molybdenum disulfide, MoS2, have attracted much attention due to their unique properties that can lead to flexible optoelectronic applications. In this project, we optimize the synthesis of MoS2 thin films on silicon substrates using a single-zone chemical vapor deposition furnace. The influence of reaction parameters was studied to achieve homogeneous film coverage and control over material morphology and layers. Thin film properties are investigated using Raman spectroscopy, optical microscopy, and scanning electron microscopy (SEM). MoS2 layers were brought down to various thicknesses via the alteration of synthesis parameters such that any customized growth could be achieved.

Results

Chemical Vapor Deposition using CVD Furnace

SEM Pictures